At very low frequencies, minority carriers have ample time to respond, causing the capacitance to curve back up to the oxide capacitance value ( Coxcap C sub o x end-sub ) during inversion.
While silicon will likely remain the dominant substrate, the materials that compose the transistor are diversifying: At very low frequencies, minority carriers have ample
Where:
The surface potential bends sufficiently to attract minority carriers, creating a highly conductive channel of opposite polarity to the substrate. Surface Potential ( ϕsphi sub s At very low frequencies
Applied voltage attracts majority carriers to the oxide-semiconductor interface. (e.g., negative voltage on p-type silicon accumulates holes). At very low frequencies, minority carriers have ample